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Product details
| Part number | TK25V60X5 |
|---|---|
| Manufacturer | Toshiba Corporation Semiconductor |
| Technical file |
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| EDA/CAD |
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| Attribute name | Attribute value |
|---|---|
| Creation date | 2016-03-11 |
| Last revised date | 2021-12-27 |
| Class code | XJA709 |
| Product's class name | MOS FETS |
| Product lifecycle stage | Development in progress |
| Package type | 2-8T1A/DFN8x8 |
| Body length[Min] | 7.9mm |
| Body length[Typ] | 8mm |
| Body length[Max] | 8.1mm |
| Body breadth[Min] | 7.9mm |
| Body breadth[Typ] | 8mm |
| Body breadth[Max] | 8.1mm |
| Body height[Min] | 0.75mm |
| Body height[Typ] | 0.85mm |
| Body height[Max] | 0.95mm |
| Mounting method | Surface mount technology |
| Pin Pitch[Typ] | 2mm |
| Number of terminals[Nom] | 5 |
| AEC compliant | - |
| Channel temperature[Max] | 150Cel |
| Number of transistors[Nom] | 1 |
| Channel type | N ch |
| Drain current (DC)[Max] | 25A |
| Drain current (pulse)[Max] | 100A |
| Allowable power dissipation[Max] | 180W |
| Gate-source threshold voltage[Min] | 3V |
| Gate-source threshold voltage[Max] | 4.5V |
| Drain-source voltage[Max] | 600V |
| Gate-source voltage[Max] | 30V |
| Drain-source current[Max] | 100microA |
| Drain-source on-resistance @10V[Typ] | 0.125Ohm |
| Drain-source on-resistance @10V[Max] | 0.15Ohm |
| Gate-source voltage at R_DS(on)_@10V[Typ] | 10V |
| Thermal resistance 2(j-mb or j-c or ch-c)[Max] | 0.694Cel/W |
