| Part number | 2MBI300U4H-120 |
|---|---|
| Product name | IGBT MODULE |
| Manufacturer | Fuji Electric |
| Technical file |
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| EDA/CAD |
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| Product overview | Collector-Emitter voltage:1200V @VCES. Gate-Emitter voltage:+-20V @VGES. Collector Power Dissipation:1470W @PC. Junction temperature:150Cel @Tj. Storage tmeperature:-40 to 125Cel @Tstg |
| Attribute name | Attribute value |
|---|---|
| Creation date | 2006-02-09 |
| Last revised date | 2011-06-13 |
| Class code | XJA764 |
| Product's class name | IGBT MODULES |
| Product lifecycle stage | Mass production |
| Application scope | Collector-Emitter voltage:1200V @VCES. Gate-Emitter voltage:+-20V @VGES. Collector Power Dissipation:1470W @PC. Junction temperature:150Cel @Tj. Storage tmeperature:-40 to 125Cel @Tstg |
| Contact address | http://www.fujielectric.co.jp/denshi/scd/sales.html |
| Storage temperature[Min] | -40Cel |
| Storage temperature[Max] | 125Cel |
| Gate-emitter leakage current[Max] | 800nA |
| Collector-emitter saturation voltage[Typ] | 2.3V |
| Gate-emitter voltage[Max] | 20V |
| Collector current (DC)[Max] | 400A |
| Collector current (pulse)[Max] | 800A |
| Collector-emitter power dissipation[Max] | 1470W |
| Collector-emitter cutoff current[Max] | 4mA |
| Fall time[Typ] | 70ns |
| Fall time[Max] | 300ns |
| Gate-emitter threshold voltage[Max] | 8.5V |
| Equivalent circuit | 2in1 |
| Gate-emitter cutoff voltage[Min] | 4.5V |
| Gate-emitter cutoff voltage[Max] | 8.5V |
| Turn-off time[Typ] | 410ns |
| Turn-off time[Max] | 1000ns |
| Forward voltage[Typ] | 1.95V |
| Thermal resistance (transistor stage)[Max] | 0.085Cel/W |
| Thermal resistance (diode stage)[Max] | 0.14Cel/W |
