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Product details
| Part number | 1MBI1000UG-330 |
|---|---|
| Product name | IGBT MODULE 3300V/1000A/1 in one package |
| Manufacturer | Fuji Electric |
| Technical file |
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| EDA/CAD |
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| Product overview | AISiC Baseplate. AIN DCB substrate. CTI to 600. Viso 6000 Vac. Low Inductance module structure. |
| Attribute name | Attribute value |
|---|---|
| Creation date | 2013-10-15 |
| Last revised date | 2013-10-15 |
| Class code | XJA764 |
| Product's class name | IGBT MODULES |
| Family or series name | U series |
| Product lifecycle stage | Mass production |
| Application scope | Traction drives, Industrial motor drives, Wind power, Chopper |
| Contact address | http://www.fujielectric.com/products/semiconductor/ |
| Body length[Typ] | 140mm |
| Body length[Max] | 141mm |
| Body breadth[Typ] | 130mm |
| Body breadth[Max] | 131mm |
| Body height[Typ] | 38mm |
| Body height[Max] | 38.5mm |
| Mounting method | Flange type |
| Storage temperature[Min] | -40Cel |
| Storage temperature[Max] | 125Cel |
| Number of transistors[Nom] | 2 |
| Main material | Si |
| Gate-emitter leakage current[Max] | 3200nA |
| Collector-emitter saturation voltage[Typ] | 2.59V |
| Collector-emitter saturation voltage[Max] | 3.09V |
| Gate-emitter voltage[Max] | 20V |
| Collector current (DC)[Max] | 1000A |
| Collector current (pulse)[Max] | 2000A |
| Collector-emitter power dissipation[Max] | 10.4kW |
| Collector-emitter cutoff current[Max] | 1mA |
| Fall time[Typ] | 0.5micros |
| Collector-emitter voltage[Max] | 3300V |
| Turn-on time[Typ] | 2.5micros |
| Rise time[Typ] | 1.8micros |
| Gate-emitter threshold voltage[Min] | 6V |
| Gate-emitter threshold voltage[Typ] | 6.75V |
| Gate-emitter threshold voltage[Max] | 7.5V |
| Input capacitance[Typ] | 200nF |
| Turn-off time[Typ] | 2micros |
| Reverse recovery time[Typ] | 0.94micros |
| Thermal resistance(IGBT area)[Max] | 0.012Cel/W |
| Thermal resistance(FRD area)[Max] | 0.0225Cel/W |
| Channel type | N ch |
| Equivalent circuit | 2in1 |
| Gate-emitter cutoff voltage[Min] | 6V |
| Gate-emitter cutoff voltage[Max] | 7.5V |
| Turn-off time[Typ] | 2micros |
| Forward voltage[Typ] | 2.51V |
| Forward voltage[Max] | 3.11V |
| Thermal resistance (transistor stage)[Max] | 0.012Cel/W |
| Thermal resistance (diode stage)[Max] | 0.0225Cel/W |
| Isolation voltage[Min] | 6kV |
