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Product details
| Part number | FS200R07A02E3_S6 |
|---|---|
| Product name | Double Side Cooled Module |
| Manufacturer | Infineon Technologies |
| Technical file |
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| EDA/CAD |
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| Attribute name | Attribute value |
|---|---|
| Creation date | 2018-09-27 |
| Last revised date | 2018-09-27 |
| Class code | XJA764 |
| Product's class name | IGBT MODULES |
| Product lifecycle stage | Mass production |
| Body length[Typ] | 86mm |
| Body length[Max] | 86.2mm |
| Body breadth[Typ] | 43mm |
| Body breadth[Max] | 43.2mm |
| Body height[Typ] | 6mm |
| Body height[Max] | 6.1mm |
| Mounting method | PCB insertion |
| Pin Pitch[Typ] | 2.8mm |
| Number of terminals[Nom] | 28 |
| AEC compliant | - |
| Number of transistors[Nom] | 6 |
| Gate-emitter leakage current[Max] | 400nA |
| Collector-emitter saturation voltage[Typ] | 1.45V |
| Collector-emitter saturation voltage[Max] | 2.25V |
| Gate-emitter voltage[Max] | 20V |
| Collector current (DC)[Max] | 200A |
| Collector-emitter power dissipation[Max] | 694W |
| Collector-emitter cutoff current[Max] | 0.1mA |
| Collector-emitter voltage[Max] | 700V |
| Gate-emitter threshold voltage[Min] | 5V |
| Gate-emitter threshold voltage[Typ] | 5.8V |
| Gate-emitter threshold voltage[Max] | 6.5V |
| Input capacitance[Typ] | 13.5nF |
| Thermal resistance(IGBT area)[Max] | 1.08Cel/W |
| Thermal resistance(FRD area)[Max] | 1.68Cel/W |
| Channel type | N ch |
| Forward current (DC)[Max] | 200A |
| Equivalent circuit | 6in1 |
| Gate-emitter cutoff voltage[Min] | 5V |
| Gate-emitter cutoff voltage[Max] | 6.5V |
| Forward voltage[Typ] | 1.6V |
| Forward voltage[Max] | 2.55V |
| Thermal resistance (transistor stage)[Max] | 1.08Cel/W |
| Thermal resistance (diode stage)[Max] | 1.68Cel/W |
| Isolation voltage[Min] | 2.5kV |
