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Product details
| Part number | TK35A65W |
|---|---|
| Manufacturer | Toshiba Corporation Semiconductor |
| Technical file |
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| EDA/CAD |
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| Attribute name | Attribute value |
|---|---|
| Creation date | 2016-03-11 |
| Last revised date | 2021-12-27 |
| Class code | XJA709 |
| Product's class name | MOS FETS |
| Product lifecycle stage | Mass production |
| Package type | TO-220SIS |
| Body length[Min] | 9.7mm |
| Body length[Typ] | 10mm |
| Body length[Max] | 10.3mm |
| Body breadth[Min] | 4.3mm |
| Body breadth[Typ] | 4.5mm |
| Body breadth[Max] | 4.7mm |
| Body height[Min] | 14.7mm |
| Body height[Typ] | 15mm |
| Body height[Max] | 15.3mm |
| Mounting method | PCB insertion |
| Pin Pitch[Typ] | 2.54mm |
| Number of terminals[Nom] | 3 |
| AEC compliant | - |
| Channel temperature[Max] | 150Cel |
| Number of transistors[Nom] | 1 |
| Channel type | N ch |
| Drain current (DC)[Max] | 35A |
| Drain current (pulse)[Max] | 140A |
| Allowable power dissipation[Max] | 50W |
| Gate-source threshold voltage[Min] | 2.5V |
| Gate-source threshold voltage[Max] | 3.5V |
| Drain-source voltage[Max] | 650V |
| Gate-source voltage[Max] | 30V |
| Drain-source current[Max] | 10microA |
| Drain-source on-resistance @10V[Typ] | 0.068Ohm |
| Drain-source on-resistance @10V[Max] | 0.08Ohm |
| Gate-source voltage at R_DS(on)_@10V[Typ] | 10V |
| Thermal resistance 1(j-a or ch-a)[Max] | 62.5Cel/W |
| Thermal resistance 2(j-mb or j-c or ch-c)[Max] | 2.5Cel/W |
