| Part number | RN1227 |
|---|---|
| Manufacturer | Toshiba Corporation Semiconductor |
| Technical file | |
| EDA/CAD |
|
| Attribute name | Attribute value |
|---|---|
| Creation date | 2008-08-07 |
| Last revised date | 2021-12-28 |
| Class code | ZJA705 |
| Product's class name | GENERAL PURPOSE BIPOLAR TRANSISTORS |
| Product lifecycle stage | Discontinued products |
| Package type | 2-4E1A |
| Contact address | http://toshiba.semicon-storage.com/jp/contact.html |
| Mass[Nom] | 0.13g |
| Body length[Typ] | 4.2mm |
| Body breadth[Typ] | 2.6mm |
| Body height[Typ] | 3.2mm |
| AEC compliant | - |
| Storage temperature[Min] | -55Cel |
| Storage temperature[Max] | 150Cel |
| Junction temperature[Max] | 150Cel |
| Number of transistors[Nom] | 1 |
| Number of NPN transistors[Nom] | 1 |
| Number of PNP transistors[Nom] | 0 |
| Collector current (DC)[Max] | 800mA |
| Collector-emitter power dissipation[Max] | 300mW |
| DC current gain[Min] | 90 |
| Collector-emitter saturation voltage 1[Max] | 0.25V |
| Collector-base voltage[Max] | 50V |
| Collector-emitter voltage[Max] | 50V |
| TR polarity | NPN |
| Input resistance[Min] | 1.54kOhm |
| Input resistance[Nom] | 2.2kOhm |
| Input resistance[Max] | 2.86kOhm |
| Resistance ratio(R1/R2)[Min] | 0.2 |
| Resistance ratio(R1/R2)[Nom] | 0.22 |
| Resistance ratio(R1/R2)[Max] | 0.24 |
| Resistance between base and emitter[Min] | 7.7kOhm |
| Resistance between base and emitter[Nom] | 10kOhm |
| Resistance between base and emitter[Max] | 11.9kOhm |
| Number of Resistances[Nom] | 2 |
