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Product details
| Part number | 2SB1555 |
|---|---|
| Manufacturer | Toshiba Corporation Semiconductor |
| Technical file | |
| EDA/CAD |
|
| Product overview | シリコンPNPエピタキシャル形(ダーリントン接続)トランジスタ |
| Attribute name | Attribute value |
|---|---|
| Creation date | 2001-03-27 |
| Last revised date | 2014-10-14 |
| Class code | XJA705 |
| Product's class name | GENERAL PURPOSE BIPOLAR TRANSISTORS |
| Product lifecycle stage | Maintained products |
| Package type | 2-21F1A |
| Contact address | http://toshiba.semicon-storage.com/jp/contact.html |
| Mass[Nom] | 9.75g |
| Body length[Max] | 20.5mm |
| Body breadth[Max] | 5.2mm |
| Body height[Typ] | 26mm |
| Body height[Max] | 26.5mm |
| Storage temperature[Min] | -55Cel |
| Storage temperature[Max] | 150Cel |
| Junction temperature[Max] | 150Cel |
| Number of transistors[Nom] | 2 |
| Collector current (DC)[Max] | -7A |
| Collector-emitter power dissipation[Max] | 100W |
| DC current gain[Min] | 2000 |
| DC current gain[Max] | 30000 |
| Gain-bandwidth product/Transition frequency[Typ] | 30MHz |
| Collector-emitter saturation voltage 1[Max] | -2.5V |
| Collector-base voltage[Max] | -140V |
| Collector-emitter voltage[Max] | -140V |
| TR polarity | PNP |
| Emitter-base voltage[Max] | -5V |
| Collector-base cutoff current[Max] | -5microA |
| Emitter-base cutoff current[Max] | -5microA |
| Output capacitance[Typ] | 120pF |
