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Product details
| Part number | 2SK1996 |
|---|---|
| Manufacturer | Toshiba Corporation Semiconductor |
| Technical file | |
| EDA/CAD |
|
| Product overview | GaAs Nチャネルシングルゲートヘテロ接合形 |
| Attribute name | Attribute value |
|---|---|
| Creation date | 1993-12-22 |
| Last revised date | 2014-10-14 |
| Class code | XJA691 |
| Product's class name | HIGH ELECTRON MOBILITY TRANSISTORS |
| Product lifecycle stage | Discontinued products |
| Package type | 2-2G1A |
| Contact address | http://toshiba.semicon-storage.com/jp/contact.html |
| Body length[Typ] | 1.8mm |
| Body length[Max] | 2mm |
| Body breadth[Typ] | 1.8mm |
| Body breadth[Max] | 2mm |
| Body height[Max] | 1.35mm |
| Gate-source voltage limit[Max] | -3V |
| Gate-drain voltage limit[Max] | -3V |
| Drain current limit[Max] | 60mA |
| Total power dissipation[Max] | 150mW |
| Noise figure[Typ] | 0.7dB |
| Noise figure[Max] | 0.95dB |
| Channel temperature[Max] | 125Cel |
| Storage temperature[Min] | -55Cel |
| Storage temperature[Max] | 125Cel |
